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IR2112SPBF - Infineon

Description: International Rectifier IR2112SPBF, Dual MOSFET Power Driver 0.5A, 10 → 20 V, Non-Inverting, 16-Pin SOIC W

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IR2112SPBF Details

  • Manufacturer Part Number:

    IR2112SPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • High Side Driver:

    YES

  • Input Characteristics:

    SCHMITT TRIGGER

  • Interface IC Type:

    HALF BRIDGE BASED IGBT/MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G16

  • JESD-609 Code:

    e3

  • Length:

    10.3 mm

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    16

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    PUSH-PULL

  • Output Peak Current Limit-Nom:

    0.5 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP16,.4

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    2.65 mm

  • Supply Voltage-Max:

    20 V

  • Supply Voltage-Min:

    10 V

  • Supply Voltage-Nom:

    15 V

  • Supply Voltage1-Max:

    620 V

  • Supply Voltage1-Min:

    5 V

  • Supply Voltage1-Nom:

    15 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    0.16 µs

  • Turn-on Time:

    0.18 µs

  • Width:

    7.5 mm

IR2112SPBF Frequently Asked Questions (FAQs)

  • The maximum voltage rating of the IR2112SPBF is 600V, making it suitable for high-voltage applications.
  • Proper thermal management can be achieved by providing a heat sink, ensuring good airflow, and keeping the device away from heat sources. The thermal resistance of the package is 2.5°C/W.
  • The bootstrap capacitor is used to generate the high-side gate drive voltage. It is charged through the bootstrap diode and discharged through the high-side FET.
  • The bootstrap capacitor value depends on the switching frequency, high-side FET gate charge, and desired voltage ripple. A general guideline is to use a capacitor with a value between 10nF to 100nF.
  • The recommended dead time for the IR2112SPBF is typically between 100ns to 500ns, depending on the specific application and switching frequency.

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IR2112SPBF Overview

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