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IR2117SPBF - Infineon

Description: SINGLE CHANNEL DRIVER

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IR2117SPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-8l
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IR2117SPBF Details

  • Manufacturer Part Number:

    IR2117SPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • High Side Driver:

    YES

  • Input Characteristics:

    STANDARD

  • Interface IC Type:

    BUFFER OR INVERTER BASED MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.9 mm

  • Moisture Sensitivity Level:

    2

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    STANDARD

  • Output Peak Current Limit-Nom:

    0.5 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.75 mm

  • Supply Voltage-Max:

    20 V

  • Supply Voltage-Min:

    10 V

  • Supply Voltage-Nom:

    15 V

  • Supply Voltage1-Max:

    620 V

  • Supply Voltage1-Min:

    5 V

  • Supply Voltage1-Nom:

    15 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    0.18 µs

  • Turn-on Time:

    0.2 µs

  • Width:

    3.9 mm

IR2117SPBF Frequently Asked Questions (FAQs)

  • The maximum voltage rating of the IR2117SPBF is 600V, making it suitable for high-voltage applications.
  • Proper thermal management can be achieved by providing a heat sink, ensuring good airflow, and keeping the device away from heat sources. The thermal resistance of the package is 2.5°C/W.
  • The bootstrap capacitor is used to generate the high-side gate drive voltage. It is charged through the bootstrap diode and discharged through the high-side FET.
  • The bootstrap capacitor value depends on the switching frequency, high-side FET gate charge, and desired voltage ripple. A general guideline is to use a capacitor with a value between 10nF to 100nF.
  • The recommended dead time for the IR2117SPBF is typically between 100ns to 500ns, depending on the specific application and switching frequency.

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IR2117SPBF Overview

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