The recommended PCB layout for the IR21531S involves keeping the high-frequency components (such as the bootstrap capacitor and the high-side FET) close to the IC, and using a solid ground plane to reduce EMI. Additionally, it's recommended to use a Kelvin connection for the high-side FET source and the bootstrap capacitor to reduce parasitic inductance.
The bootstrap capacitor value depends on the specific application requirements, such as the switching frequency, output voltage, and current. A general rule of thumb is to choose a capacitor with a value between 10nF to 100nF. However, it's recommended to consult the application notes and simulation tools provided by Infineon to determine the optimal capacitor value for your specific design.
The maximum allowed voltage on the VCC pin is 15V, but it's recommended to keep it below 12V to ensure reliable operation and to prevent damage to the IC. Additionally, it's important to ensure that the VCC pin is properly decoupled with a capacitor to reduce noise and ripple.
The IR21531S has a built-in overcurrent protection feature that can be enabled by connecting the OC pin to the VCC pin through a resistor. The value of the resistor determines the overcurrent threshold. Additionally, it's recommended to use an external sense resistor in series with the high-side FET to monitor the current and provide additional protection.
The recommended dead time between the high-side and low-side FETs depends on the specific application requirements, such as the switching frequency and the FET characteristics. A general rule of thumb is to set the dead time to around 100ns to 200ns to ensure proper switching and to prevent shoot-through currents.
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