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IR2181PBF - Infineon

Description: INFINEON - IR2181PBF - Dual MOSFET Driver, High Side And Low Side, 10V-20V Supply, 2.3A Out, 220ns Delay, DIP-8

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IR2181PBF - Infineon PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - 8 Lead PDIP-
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IR2181PBF Details

  • Manufacturer Part Number:

    IR2181PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MS-001AB, DIP-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • High Side Driver:

    YES

  • Input Characteristics:

    SCHMITT TRIGGER

  • Interface IC Type:

    HALF BRIDGE BASED MOSFET DRIVER

  • JESD-30 Code:

    R-PDIP-T8

  • Length:

    9.88 mm

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    STANDARD

  • Output Peak Current Limit-Nom:

    2.3 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    DIP

  • Package Equivalence Code:

    DIP8,.3

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    5.33 mm

  • Supply Voltage-Max:

    20 V

  • Supply Voltage-Min:

    10 V

  • Supply Voltage-Nom:

    15 V

  • Supply Voltage1-Max:

    620 V

  • Supply Voltage1-Min:

    5 V

  • Supply Voltage1-Nom:

    15 V

  • Surface Mount:

    NO

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Pitch:

    2.54 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Turn-off Time:

    0.33 µs

  • Turn-on Time:

    0.27 µs

  • Width:

    7.62 mm

IR2181PBF Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the IR2181PBF is 500 kHz, but it can be operated up to 1 MHz with reduced performance.
  • Proper thermal management can be achieved by providing a heat sink, ensuring good airflow, and keeping the device away from heat sources. The thermal resistance of the package is 3.5°C/W.
  • The recommended dead time for the IR2181PBF is 100-200 ns, but it can be adjusted based on the specific application requirements.
  • Yes, the IR2181PBF can be used in a half-bridge configuration, but it requires an external bootstrap diode and a high-side driver.
  • The IR2181PBF has built-in overvoltage protection (OVP) and undervoltage protection (UVP) circuits. Additionally, external protection circuits can be added to ensure the device operates within the recommended voltage range.

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IR2181PBF Overview

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Part Image IR2181 Infineon Technologies AG

Half Bridge Based MOSFET Driver, 2.3A, CMOS, PDIP8