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IRF3205ZPBF - Infineon

Description: MOSFET N-Channel 55V 110A HEXFET TO220AB Infineon IRF3205ZPBF N-channel MOSFET Transistor, 110 A, 55 V, 3-Pin TO-220AB

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PCB Footprints

IRF3205ZPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB PACKAGE-ren1
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3D Models

IRF3205ZPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB PACKAGE-ren1
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  • Datasheet Download Datasheet
  • Stock & Prices $ Check Stock & Prices
  • Part Number IRF3205ZPBF
  • Manufacturer Infineon
  • Pin Count 3
  • Part Category Transistor
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO-220AB PACKAGE-ren1
  • Confidence Level C4 ?
  • Released Date Aug 25, 2017
  • Pinout / Pin List Click Here (Member Only)

Risk Rank: Design Risk

IRF3205ZPBF — Infineon
2.2 - Low Design Risk
Design Risk Rank is determined by in-depth analysis across multiple factors, including part availability, functional equivalents, lifecycle and more. Learn more →

Risk Rank

Risk Rank is a proprietary algorithm Supplyframe has developed to quantify component risk using multiple data points. This ranking helps engineers and buyers determine whether alternates should be sought for parts that are deemed as high risk.

Risk Rank Example

Risk Rank is determined by a combination of factors such as product lifecycle status, price & inventory volatility, current inventory availability and much more. Even the availability of manufacturer specifications, part documentation such as datasheets and reference designs have an impact on determining the overall riskiness of a part.

The risk is characterized across three product phases:

  • Design
  • Production
  • Long Term

We focus on the Design Phase on Component Search Engine in our evaluation of Risk.

Design Phase

The design phase of a product is at the beginning of the product lifecycle. This is when engineers are doing analysis of components in the marketplace, determining which specifications are most important for their design and assessing the cost impact of using this particular component. While this is early in the product lifecycle, choices at this point can severely impact a product much later on when the product is being made. Additionally, this stage is the one furthest from a product being made, which is why we focus on metrics of stability over time when determining Design Risk.

Risk Rank Breakdown

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4/5
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IRF3205ZPBF Overview

Use the download button to access the IRF3205ZPBF schematic symbol, PCB footprint, and 3D model.
IRF3205ZPBF by Texas Instruments has a low Design Risk Rank score of
To find more CAD model downloads similar to this part, try a partial part number search, like IRF32, or try a keyword search, such as Power Field-Effect Transistors.

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Part Image AUIRF3205Z Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

Part Image IRF3205ZPBF International Rectifier

Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Image IRF3205Z International Rectifier

Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Image AUIRF3205Z International Rectifier

Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3