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IRF460R1 - SEMELAB

Description: N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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PCB Footprints
IRF460R1 - SEMELAB PCB footprint - Other - Other - TO–3 (TO–204AA) _2
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3D Models
IRF460R1 - SEMELAB  - 3D model - Other - TO–3 (TO–204AA) _2
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IRF460R1 Details

  • Manufacturer Part Number:

    IRF460R1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active Unconfirmed

  • Package Description:

    FLANGE MOUNT, O-MBFM-P2

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    TT Electronics Power and Hybrid / Semelab Limited

  • YTEOL:

    2

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.31 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-3

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    84 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Element Material:

    SILICON

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IRF460R1 Overview

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IRF460R1 Alternates

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Image Part Number Model
Part Image IRF460 Rochester Electronics LLC

21A, 500V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

Part Image IRF460PBF International Rectifier

Power Field-Effect Transistor, 21A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE

Part Image IRF460-JQR-B TT Electronics Power and Hybrid / Semelab Limited

Power Field-Effect Transistor, 21A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

Part Image IRF460-JQR-B TT Electronics Resistors

Power Field-Effect Transistor, 21A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

Part Image IRF460R1 TT Electronics Resistors

Power Field-Effect Transistor, 21A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

For a full list of alternate parts for IRF460R1, check out Findchips.com