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IRF740A - Vishay

Description: N-Channel 400 V 10A (Tc) 125W (Tc) Through Hole TO-220AB

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IRF740A - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB (High Voltage)
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IRF740A - Vishay  - 3D model - Transistor Outline, Vertical - TO-220AB (High Voltage)
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IRF740A Details

  • Manufacturer Part Number:

    IRF740A

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220AB, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    630 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.55 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF740A Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRF740A is not explicitly stated in the datasheet, but it can be determined by consulting Vishay's application note AN1035, which provides SOA curves for the device.
  • To ensure proper thermal management, the IRF740A should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to keep the junction temperature (Tj) below 150°C. Additionally, the device should be operated within its recommended operating conditions to minimize power dissipation.
  • The recommended gate drive voltage for the IRF740A is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It is recommended to consult the datasheet and application notes for more information.
  • Yes, the IRF740A can be used in high-frequency switching applications up to 1MHz. However, the device's switching characteristics, such as rise and fall times, should be carefully considered to ensure proper operation. Additionally, the device's power dissipation and thermal management should be carefully managed to prevent overheating.
  • The IRF740A is a commercial-grade device and may not meet the requirements for high-reliability or aerospace applications. For such applications, it is recommended to use a device that is specifically designed and qualified for high-reliability or aerospace use, such as a device with a higher temperature rating and more stringent testing and screening requirements.

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IRF740A Overview

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IRF740A Alternates

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Image Part Number Model
Part Image IRF740APBF Vishay Intertechnologies

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF740A Rochester Electronics LLC

10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN

Part Image IRF740APBF International Rectifier

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF740A International Rectifier

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF740A Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for IRF740A, check out Findchips.com