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IRF7413ZTRPBF - Infineon

Description: MOSFET MOSFT 30V 13A 10mOhm 9.5nC

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IRF7413ZTRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - so-8+
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IRF7413ZTRPBF Details

  • Manufacturer Part Number:

    IRF7413ZTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    LEAD FREE, SOP-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    32 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7413ZTRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7413ZTRPBF is -40°C to 150°C.
  • Yes, the IRF7413ZTRPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
  • The maximum current rating for the IRF7413ZTRPBF is 110A.
  • Yes, the IRF7413ZTRPBF is a RoHS-compliant device, meaning it meets the European Union's Restriction of Hazardous Substances directive.
  • The typical turn-on time for the IRF7413ZTRPBF is 10ns, and the typical turn-off time is 20ns.

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Power Field-Effect Transistor, 13A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET