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IRF7424TRPBF - Infineon

Description: MOSFET MOSFT PCh -30V -11A 13.5mOhm 75nC

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IRF7424TRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 8 Lead SOIC HEIGHT 1.75
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IRF7424TRPBF - Infineon  - 3D model - Small Outline Packages - 8 Lead SOIC HEIGHT 1.75
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IRF7424TRPBF Details

  • Manufacturer Part Number:

    IRF7424TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.0135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

IRF7424TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7424TRPBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The recommended gate drive voltage for the IRF7424TRPBF is between 10V to 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF7424TRPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the IRF7424TRPBF with ESD-protective equipment, wear an ESD strap, and ensure the PCB has ESD protection circuits to prevent damage.

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IRF7424TRPBF Overview

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Part Image IRF7424PBF International Rectifier

Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7424 International Rectifier

Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image ELM34411AA-N ELM Technology Corp

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Part Image IRF7424GPBF Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7424 Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

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