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IRF7455PBF - Infineon

Description: INFINEON - IRF7455PBF - MOSFET, N, LOGIC, SO-8

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IRF7455PBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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IRF7455PBF - Infineon  - 3D model - Small Outline Packages - SO-8
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IRF7455PBF Details

  • Manufacturer Part Number:

    IRF7455PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7455PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7455PBF is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and monitoring junction temperature.
  • The recommended gate drive voltage for the IRF7455PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF7455PBF from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in anti-static packaging.
  • The maximum allowable power dissipation for the IRF7455PBF is 150W, but this value can be derated based on the operating temperature and other factors.

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Part Image IRF7455TR Infineon Technologies AG

Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA