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IRF840 - STMicroelectronics

Description: MOSFET N-Ch 500 Volt 8 Amp

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IRF840 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRF840
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IRF840 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - IRF840
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IRF840 Details

  • Manufacturer Part Number:

    IRF840

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220AB, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    520 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.85 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    110 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    125 W

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    125 ns

  • Turn-on Time-Max (ton):

    93 ns

IRF840 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRF840 is not explicitly stated in the datasheet. However, STMicroelectronics provides a SOA curve in the application note AN440, which shows the maximum allowable drain-source voltage and current combinations for the device.
  • To ensure the IRF840 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive voltage should be able to supply sufficient current to charge the gate capacitance quickly. A gate resistor (Rg) of around 10-20 ohms is recommended to limit the gate current.
  • The maximum junction temperature (Tj) for the IRF840 is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • Yes, the IRF840 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge. The IRF840 has a relatively high gate charge, which may limit its suitability for very high-frequency applications.
  • To protect the IRF840 from electrostatic discharge (ESD), it's recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-protected workstations and tools. Additionally, the device should be stored in an anti-static package or bag when not in use.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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