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IRF8788TRPBF - Infineon

Description: Infineon IRF8788TRPBF N-channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC

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Symbol
IRF8788TRPBF - Infineon - PCB symbol
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PCB Footprints
IRF8788TRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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3D Models
IRF8788TRPBF - Infineon - 3D model - Small Outline Packages - SO-8
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IRF8788TRPBF Details

  • Manufacturer Part Number:

    IRF8788TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    24 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Surface Mount:

    YES

IRF8788TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF8788TRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF8788TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF8788TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in anti-static packaging.
  • The maximum allowable power dissipation for the IRF8788TRPBF is 150W, but this value can be derated based on the operating temperature and other factors.

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IRF8788TRPBF Overview

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