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IRF9317TRPBF - Infineon

Description: IRF9317TRPBF P-Channel MOSFET, 16 A, 30 V HEXFET, 8-Pin SOIC Infineon

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IRF9317TRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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IRF9317TRPBF - Infineon  - 3D model - Small Outline Packages - SO-8
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IRF9317TRPBF Details

  • Manufacturer Part Number:

    IRF9317TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    330 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.0066 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    130 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9317TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9317TRPBF is -55°C to 150°C.
  • The IRF9317TRPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
  • The maximum current rating for the IRF9317TRPBF is 12A.
  • The IRF9317TRPBF is a P-channel MOSFET.
  • The typical gate-source threshold voltage for the IRF9317TRPBF is around 2.5V.

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Power Field-Effect Transistor, 16A I(D), 30V, 0.0066ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET