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IRF9388PBF - Infineon

Description: International Rectifier IRF9388PBF P-channel MOSFET Transistor, -30 A, -30 V, 8-Pin SO

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IRF9388PBF - Infineon - PCB symbol
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IRF9388PBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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IRF9388PBF - Infineon - 3D model - Small Outline Packages - SO-8
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IRF9388PBF Details

  • Manufacturer Part Number:

    IRF9388PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.0119 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    96 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9388PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9388PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • Use a multi-layer PCB with a solid ground plane, keep high-current paths short and wide, and use shielding or filtering to minimize EMI.
  • Yes, the IRF9388PBF is suitable for switching regulator applications due to its low RDS(on) and high switching frequency capability.
  • Use a voltage regulator or overvoltage protection circuit, and consider adding overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IRF9388PBF Overview

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IRF9388PBF Alternates

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Part Image IRF9388TRPBF Infineon Technologies AG

Power Field-Effect Transistor, 12A I(D), 30V, 0.0119ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA