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IRF9530PBF-BE3 - Vishay

Description: MOSFET 100V P-CH HEXFET MOSFET

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IRF9530PBF-BE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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3D Models
IRF9530PBF-BE3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
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IRF9530PBF-BE3 Details

  • Manufacturer Part Number:

    IRF9530PBF-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    400 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    93 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    88 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9530PBF-BE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9530PBF-BE3 is -55°C to 175°C.
  • The IRF9530PBF-BE3 is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
  • The maximum current rating for the IRF9530PBF-BE3 is 23A.
  • The IRF9530PBF-BE3 is a P-channel MOSFET.
  • The typical gate-source threshold voltage for the IRF9530PBF-BE3 is 2.5V.

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IRF9530PBF-BE3 Overview

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