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IRF9610PBF-BE3 - Vishay

Description: MOSFET 200V P-CH HEXFET MOSFET

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IRF9610PBF-BE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1-
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IRF9610PBF-BE3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1-
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IRF9610PBF-BE3 Details

  • Manufacturer Part Number:

    IRF9610PBF-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    1.8 A

  • Drain-source On Resistance-Max:

    3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    7 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9610PBF-BE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9610PBF-BE3 is -55°C to 175°C.
  • The IRF9610PBF-BE3 is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
  • The maximum current rating for the IRF9610PBF-BE3 is 12A.
  • The IRF9610PBF-BE3 is a P-channel MOSFET.
  • The typical gate-source threshold voltage for the IRF9610PBF-BE3 is 2.5V.

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IRF9610PBF-BE3 Overview

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