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IRF9620SPBF - Vishay

Description: P-Channel 200 V 3.5A (Tc) 3W (Ta), 40W (Tc) Surface Mount TO-263 (D2PAK)

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IRF9620SPBF - Vishay PCB footprint - Other - Other - TO-263AB  (HIGH VOLTAGE)
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IRF9620SPBF Details

  • Manufacturer Part Number:

    IRF9620SPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.95

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9620SPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9620SPBF is -55°C to 175°C.
  • The IRF9620SPBF is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.
  • The maximum gate-source voltage (Vgs) for the IRF9620SPBF is ±20V.
  • Yes, the IRF9620SPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • No, the IRF9620SPBF is not a radiation-hardened device. It is not designed for use in high-radiation environments.

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IRF9620SPBF Overview

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Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF9620S International Rectifier

Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF9620STRLPBF Vishay Siliconix

Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF9620STRR International Rectifier

Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF9620S Vishay Siliconix

Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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