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Part Image

IRF9Z24PBF - Vishay

Description: MOSFET P-CH -60V HEXFET MOSFET

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PCB Footprints

IRF9Z24PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220
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3D Models

IRF9Z24PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220
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Risk Rank: Design Risk

IRF9Z24PBF — Vishay
2.2 - Low Design Risk
Design Risk Rank is determined by in-depth analysis across multiple factors, including part availability, functional equivalents, lifecycle and more. Learn more →

Risk Rank

Risk Rank is a proprietary algorithm Supplyframe has developed to quantify component risk using multiple data points. This ranking helps engineers and buyers determine whether alternates should be sought for parts that are deemed as high risk.

Risk Rank Example

Risk Rank is determined by a combination of factors such as product lifecycle status, price & inventory volatility, current inventory availability and much more. Even the availability of manufacturer specifications, part documentation such as datasheets and reference designs have an impact on determining the overall riskiness of a part.

The risk is characterized across three product phases:

  • Design
  • Production
  • Long Term

We focus on the Design Phase on Component Search Engine in our evaluation of Risk.

Design Phase

The design phase of a product is at the beginning of the product lifecycle. This is when engineers are doing analysis of components in the marketplace, determining which specifications are most important for their design and assessing the cost impact of using this particular component. While this is early in the product lifecycle, choices at this point can severely impact a product much later on when the product is being made. Additionally, this stage is the one furthest from a product being made, which is why we focus on metrics of stability over time when determining Design Risk.

Risk Rank Breakdown
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IRF9Z24PBF Overview

Use the download button to access the IRF9Z24PBF schematic symbol, PCB footprint, and 3D model.
IRF9Z24PBF by Vishay has a score of
To find more CAD model downloads similar to this part, try a partial part number search, like IRF9Z, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF9Z24PBF

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IRF9Z24PBF Alternates

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Image Part Number Design Risk Rank Model
Part Image IRF9Z24PBF Vishay Intertechnologies

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

Part Image IRF9Z24 Samsung Semiconductor

Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Image IRF9Z24 Vishay Intertechnologies

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Image SIHF9Z24 Vishay Siliconix

TRANSISTOR 11 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, FET General Purpose Power

Part Image IRF9Z24 International Rectifier

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for IRF9Z24PBF, check out FindChips.com