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IRFB13N50APBF - Vishay

Description: Trans MOSFET N-CH 500V 14A

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IRFB13N50APBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-
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IRFB13N50APBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-
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IRFB13N50APBF Details

  • Manufacturer Part Number:

    IRFB13N50APBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    560 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.45 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFB13N50APBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IRFB13N50APBF is 175°C.
  • Yes, the IRFB13N50APBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • To ensure proper cooling, provide a heat sink with a thermal resistance of less than 10°C/W, and ensure good thermal contact between the device and heat sink.
  • The maximum current rating of the IRFB13N50APBF is 13A.
  • Yes, the IRFB13N50APBF is AEC-Q101 qualified, making it suitable for automotive applications.

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IRFB13N50APBF Overview

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Part Image IRFB13N50APBF Vishay Siliconix

Power Field-Effect Transistor, 14A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFB13N50A International Rectifier

Power Field-Effect Transistor, 14A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFB13N50APBF International Rectifier

Power Field-Effect Transistor, 14A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFB13N50A Vishay Siliconix

Power Field-Effect Transistor, 14A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFB13N50A Vishay Intertechnologies

Power Field-Effect Transistor, 14A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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