Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IRFB4615PBF - Infineon

Description: Infineon IRFB4615PBF N-channel MOSFET, 35 A, 150 V HEXFET, 3-Pin TO-220AB

Download IRFB4615PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IRFB4615PBF - Infineon - PCB symbol
click to zoom
PCB Footprints
IRFB4615PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB
click to zoom
3D Models
IRFB4615PBF - Infineon - 3D model - Transistor Outline, Vertical - TO-220AB
click to zoom

IRFB4615PBF Details

  • Manufacturer Part Number:

    IRFB4615PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    109 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    144 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFB4615PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFB4615PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRFB4615PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFB4615PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper thermal management and follow the recommended gate drive and layout guidelines.
  • Use a suitable overvoltage protection circuit, such as a zener diode or a transient voltage suppressor, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFB4615PBF Overview

Use the download button to access the IRFB4615PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFB4, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFB4615PBF

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑