AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
420 mJ
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
100 V
Drain Current-Max (ID):
42 A
Drain-source On Resistance-Max:
0.036 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-247AC
JESD-30 Code:
R-PSFM-T3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
160 W
Pulsed Drain Current-Max (IDM):
140 A
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRFP150MPBF Frequently Asked Questions (FAQs)
The maximum safe operating area (SOA) for the IRFP150MPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or in a separate application note. For the IRFP150MPBF, the SOA is typically limited by the maximum drain-source voltage, drain current, and junction temperature.
To ensure proper thermal management of the IRFP150MPBF, it is essential to provide a good thermal path from the device to a heat sink or other cooling mechanism. This can be achieved by applying a thermal interface material (TIM) to the device, using a heat sink with a high thermal conductivity, and ensuring good airflow around the device. The thermal resistance of the device, heat sink, and TIM should be minimized to ensure efficient heat transfer.
The recommended gate drive voltage for the IRFP150MPBF is typically between 10V to 15V, depending on the specific application and required switching speed. A higher gate drive voltage can result in faster switching times, but may also increase the risk of gate oxide damage. It is essential to consult the datasheet and application notes for specific guidance on gate drive voltage selection.
To protect the IRFP150MPBF from electrostatic discharge (ESD), it is essential to handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and storing the device in an ESD-safe environment. Additionally, the device should be connected to a ground plane or other ESD protection circuitry to prevent ESD damage during operation.
The maximum allowed drain-source voltage (Vds) for the IRFP150MPBF is 150V, as specified in the datasheet. Exceeding this voltage can result in device damage or failure.
Trust Checks
This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored
IRFP150MPBF Overview
Use the download button to access the IRFP150MPBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFP1,
or try a keyword search, such as Power Field-Effect Transistors
