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IRFP4137PBF - Infineon

Description: IRFP4137PBF N-Channel MOSFET, 38 A, 300 V HEXFET, 3-Pin TO-247AC Infineon

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PCB Footprints
IRFP4137PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_
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3D Models
IRFP4137PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-247AC_
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IRFP4137PBF Details

  • Manufacturer Part Number:

    IRFP4137PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    38 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Number of Elements:

    1

  • Operating Temperature-Max:

    175 °C

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    341 W

  • Surface Mount:

    NO

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

IRFP4137PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFP4137PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRFP4137PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFP4137PBF is suitable for switching applications due to its low RDS(on) and high switching speed. However, ensure proper gate drive and layout to minimize switching losses.
  • Use a suitable voltage regulator and overvoltage protection circuit, and consider adding overcurrent protection devices such as fuses or current sensors to prevent damage.

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