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IRFP460 - STMicroelectronics

Description: N - CHANNEL 500V - 0.22Ω- 20 A - TO-247PowerMESH MOSFET

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IRFP460 - STMicroelectronics - PCB symbol
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PCB Footprints
IRFP460 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_2025
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IRFP460 Details

  • Manufacturer Part Number:

    IRFP460

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247AC

  • Package Description:

    TO-247, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    960 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    18.4 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    280 W

  • Pulsed Drain Current-Max (IDM):

    73.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP460 Frequently Asked Questions (FAQs)

  • The maximum SOA for the IRFP460 is typically defined by the manufacturer as the region where the device can operate safely without damage. For the IRFP460, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id). The SOA can be found in the datasheet or application notes.
  • Proper thermal management is crucial for the IRFP460. Ensure good thermal contact between the device and a heat sink, and use thermal interface materials (TIMs) to minimize thermal resistance. Also, consider the maximum junction temperature (Tj) rating of 175°C and ensure the device is operated within the recommended temperature range.
  • The recommended gate drive voltage for the IRFP460 is typically between 10V to 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • To protect the IRFP460 from overvoltage and overcurrent, consider using voltage clamping devices such as zener diodes or transient voltage suppressors (TVS) to limit voltage spikes. Additionally, use current sensing and overcurrent protection (OCP) circuits to prevent excessive current flow.
  • For optimal performance and reliability, follow good PCB layout and routing practices for the IRFP460. Keep the drain and source pins as close as possible to minimize inductance, and use a solid ground plane to reduce electromagnetic interference (EMI). Consult the datasheet and application notes for more information.

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IRFP460 Overview

Use the download button to access the IRFP460 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFP4, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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IRFP460 Alternates

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Image Part Number Model
Part Image IRFP460 Rochester Electronics LLC

20A, 500V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Part Image IRFP460PBF Vishay Siliconix

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IRFP460 Intersil Corporation

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IRFP460 NXP Semiconductors

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IRFP460 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
For a full list of alternate parts for IRFP460, check out Findchips.com