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IRFP7530PBF - Infineon

Description: Infineon IRFP7530PBF N-channel MOSFET, 195 A, 60 V StrongIRFET, 3-Pin TO-247

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Symbol
IRFP7530PBF - Infineon - PCB symbol
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PCB Footprints
IRFP7530PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_2
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3D Models
IRFP7530PBF - Infineon - 3D model - Transistor Outline, Vertical - TO-247AC_2
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IRFP7530PBF Details

  • Manufacturer Part Number:

    IRFP7530PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    281 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Operating Temperature-Max:

    175 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    341 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

IRFP7530PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFP7530PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRFP7530PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFP7530PBF is suitable for switching applications due to its low RDS(on) and high switching speed. However, ensure proper gate drive and layout to minimize switching losses.
  • Use a suitable voltage regulator and overvoltage protection circuit, and consider adding overcurrent protection devices such as fuses or current sensors to prevent damage to the device.

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IRFP7530PBF Overview

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