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IRFR014TRPBF - Vishay

Description: N-Channel 60 V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount DPAK , 60 V , 300 pF , -55°C ~ 150°C

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PCB Footprints
IRFR014TRPBF - Vishay PCB footprint - Other - Other - DPAK (TO-252)_2025-2.1
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3D Models
IRFR014TRPBF - Vishay  - 3D model - Other - DPAK (TO-252)_2025-2.1
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IRFR014TRPBF Details

  • Manufacturer Part Number:

    IRFR014TRPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252AA

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    47 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    7.7 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    31 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR014TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFR014TRPBF is -55°C to 175°C.
  • Yes, the IRFR014TRPBF is a fast-recovery diode with a recovery time of 35 ns.
  • The maximum repetitive reverse voltage (VRRM) for the IRFR014TRPBF is 1400 V.
  • Yes, the IRFR014TRPBF is suitable for high-frequency switching applications due to its low reverse recovery time and low Qrr.
  • The typical junction capacitance of the IRFR014TRPBF is 120 pF.

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IRFR014TRPBF Overview

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Part Image IRFR014TRRPBF Vishay Intertechnologies

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Part Image IRFR014TRL Vishay Intertechnologies

Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR014TR Vishay Siliconix

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For a full list of alternate parts for IRFR014TRPBF, check out Findchips.com