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IRFR220NTRPBF - Infineon

Description: N-Channel 200 V 5A (Tc) 43W (Tc) Surface Mount TO-252AA (DPAK) HEXFET 600mOhms 15nC -55 to + 175°C

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IRFR220NTRPBF - Infineon PCB footprint - Other - Other - DPAK (TO-252)
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IRFR220NTRPBF - Infineon  - 3D model - Other - DPAK (TO-252)
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IRFR220NTRPBF Details

  • Manufacturer Part Number:

    IRFR220NTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    46 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR220NTRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFR220NTRPBF is -55°C to 175°C.
  • The IRFR220NTRPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
  • The maximum current rating for the IRFR220NTRPBF is 12A.
  • Yes, the IRFR220NTRPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • The typical gate threshold voltage for the IRFR220NTRPBF is around 2.5V.

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IRFR220NTRPBF Overview

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Part Image IRFR220NTRLPBF International Rectifier

Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR220NTRRPBF International Rectifier

Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR220NTRLPBF Infineon Technologies AG

Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR220NTR International Rectifier

Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR220NTRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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