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IRFR224TRLPBF - Vishay

Description: N-Channel 250 V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak

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IRFR224TRLPBF - Vishay PCB footprint - Other - Other - IRFR224TRLPBF-2
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IRFR224TRLPBF Details

  • Manufacturer Part Number:

    IRFR224TRLPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252AA

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    130 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    3.8 A

  • Drain-source On Resistance-Max:

    1.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR224TRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFR224TRLPBF is -55°C to 175°C.
  • No, the IRFR224TRLPBF is not a radiation-hardened device. It is not designed for use in high-radiation environments.
  • The recommended storage temperature range for the IRFR224TRLPBF is -55°C to 150°C.
  • Yes, the IRFR224TRLPBF can be used in high-humidity environments, but it is recommended to follow proper handling and storage procedures to prevent moisture-related damage.
  • The maximum allowable voltage for the IRFR224TRLPBF is 250V.

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IRFR224TRLPBF Overview

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IRFR224TRLPBF Alternates

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Image Part Number Model
Part Image IRFR224 Samsung Semiconductor

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRFR224TRLPBF Vishay Siliconix

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRFR224TRPBF Vishay Siliconix

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRFR224TR Vishay Intertechnologies

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR224 Vishay Siliconix

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for IRFR224TRLPBF, check out Findchips.com