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IRFR9220TRPBF-BE3 - Vishay

Description: MOSFET 200V P-CH MOSFET (D- S)

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IRFR9220TRPBF-BE3 - Vishay PCB footprint - Other - Other - IRFR9220TRPBF-BE3-2
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IRFR9220TRPBF-BE3 Details

  • Manufacturer Part Number:

    IRFR9220TRPBF-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    310 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    3.6 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    33 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR9220TRPBF-BE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFR9220TRPBF-BE3 is -55°C to 175°C.
  • No, the IRFR9220TRPBF-BE3 is not a radiation-hardened device. It is a commercial-grade device and not designed for use in high-radiation environments.
  • The recommended storage temperature range for the IRFR9220TRPBF-BE3 is -55°C to 150°C.
  • Yes, the IRFR9220TRPBF-BE3 is RoHS (Restriction of Hazardous Substances) compliant, meaning it does not contain hazardous substances like lead, mercury, and cadmium above the allowed limits.
  • The typical turn-on time for the IRFR9220TRPBF-BE3 is around 10-20 ns, but this can vary depending on the specific application and operating conditions.

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IRFR9220TRPBF-BE3 Overview

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Image Part Number Model
Part Image IRFR9220TRRPBF Vishay Intertechnologies

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image SIHFR9220-GE3 Vishay Siliconix

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRFR92209A Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR9220 Vishay Intertechnologies

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR9220 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for IRFR9220TRPBF-BE3, check out Findchips.com