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IRFS541 - Samsung Semiconductor

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IRFS541 Overview

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Part Image IRFI640G Vishay Siliconix

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Part Image IRFI640GPBF International Rectifier

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image STP19NB20FP STMicroelectronics

Power Field-Effect Transistor, 10A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image BUK445-200A NXP Semiconductors

Power Field-Effect Transistor, 7.6A I(D), 200V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image YTAF640 Toshiba America Electronic Components

Power Field-Effect Transistor, 15A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for IRFS541, check out Findchips.com