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IRFS7530TRL7PP - Infineon

Description: MOSFET MOSFET N CH 60V 240A D2PAK

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PCB Footprints
IRFS7530TRL7PP - Infineon PCB footprint - Other - Other - D2 Pak-7Pin Package
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3D Models
IRFS7530TRL7PP - Infineon  - 3D model - Other - D2 Pak-7Pin Package
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IRFS7530TRL7PP Details

  • Manufacturer Part Number:

    IRFS7530TRL7PP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.6

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.0014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Operating Temperature-Max:

    175 °C

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

IRFS7530TRL7PP Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFS7530TRL7PP is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRFS7530TRL7PP is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRFS7530TRL7PP from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-protective environment.
  • The maximum allowable power dissipation for the IRFS7530TRL7PP is 150W, but this value can be derated based on the operating temperature and other factors.

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IRFS7530TRL7PP Overview

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