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IRFU024 - Vishay

Description: MOSFET RECOMMENDED ALT 844-IRFU024PBF

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PCB Footprints
IRFU024 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-251AA
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3D Models
IRFU024 - Vishay  - 3D model - Transistor Outline, Vertical - TO-251AA
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IRFU024 Details

  • Manufacturer Part Number:

    IRFU024

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    IPAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    91 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFU024 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFU024 is -55°C to 175°C, but it's recommended to operate within -40°C to 150°C for optimal performance.
  • To ensure proper soldering, use a soldering iron with a temperature of 260°C to 280°C, and apply a soldering flux to the pins. Avoid applying excessive force or bending the pins during soldering.
  • The recommended PCB layout for the IRFU024 includes a thermal pad for heat dissipation, and keeping the drain and source pins as close as possible to the PCB to minimize inductance.
  • Yes, the IRFU024 is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to ensure optimal performance.
  • To protect the IRFU024 from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has ESD protection components such as TVS diodes or resistors.

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IRFU024 Overview

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Part Image SIHFU024-GE3 Vishay Siliconix

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Part Image IRFU024PBF International Rectifier

Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image IRFU024PBF Vishay Siliconix

Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image 2SK2018-01L Fuji Electric Co Ltd

Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRFU024 Vishay Siliconix

Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

For a full list of alternate parts for IRFU024, check out Findchips.com