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IRFU9220PBF - Vishay

Description: MOSFET P-Chan 200V 3.6 Amp

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PCB Footprints
IRFU9220PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO_251
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3D Models
IRFU9220PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO_251
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IRFU9220PBF Details

  • Manufacturer Part Number:

    IRFU9220PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.8

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    310 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    3.6 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFU9220PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFU9220PBF is -55°C to 175°C.
  • No, the IRFU9220PBF is not a radiation-hardened device. It is a commercial-grade device and not designed for use in high-radiation environments.
  • The recommended storage temperature range for the IRFU9220PBF is -55°C to 150°C.
  • While the IRFU9220PBF is a high-quality device, it is not designed for use in high-reliability applications such as aerospace, defense, or medical devices. For such applications, a more stringent qualification and testing process is required.
  • Yes, the IRFU9220PBF is RoHS (Restriction of Hazardous Substances) compliant, meaning it does not contain hazardous substances such as lead, mercury, or cadmium above the allowed limits.

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IRFU9220PBF Overview

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IRFU9220PBF Alternates

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Part Image IRFU9220 Rochester Electronics LLC

3.6A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA

Part Image SIHFU9220-GE3 Vishay Siliconix

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image IRFU9220 Harris Semiconductor

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image IRFU9220 Vishay Siliconix

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image IRFU9220 Vishay Intertechnologies

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

For a full list of alternate parts for IRFU9220PBF, check out Findchips.com