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IRFU9310PBF - Vishay

Description: IRFU9310PBF

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PCB Footprints
IRFU9310PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-251AA
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3D Models
IRFU9310PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-251AA
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IRFU9310PBF Details

  • Manufacturer Part Number:

    IRFU9310PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-251AA

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.8

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    92 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    1.8 A

  • Drain-source On Resistance-Max:

    7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    7.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFU9310PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFU9310PBF is -55°C to 175°C.
  • No, the IRFU9310PBF is not a radiation-hardened device. It is a commercial-grade power MOSFET.
  • The recommended gate drive voltage for the IRFU9310PBF is between 10V and 15V.
  • While the IRFU9310PBF is a high-quality device, it is not designed for high-reliability applications. For such applications, a more stringent screening and testing process is required.
  • Yes, the IRFU9310PBF is compatible with lead-free soldering processes, with a peak reflow temperature of 260°C.

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IRFU9310PBF Overview

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Part Image SIHFU9310-GE3 Vishay Siliconix

Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image IRFU9310PBF Vishay Siliconix

Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image IRFU9310PBF International Rectifier

Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image IRFU9310 Vishay Siliconix

Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image IRFU9310 Vishay Intertechnologies

Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

For a full list of alternate parts for IRFU9310PBF, check out Findchips.com