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IRFZ24PBF - Vishay

Description: Vishay IRFZ24PBF N-channel MOSFET Transistor, 17 A, 60 V, 3-Pin TO-220AB

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PCB Footprints
IRFZ24PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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3D Models
IRFZ24PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
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IRFZ24PBF Details

  • Manufacturer Part Number:

    IRFZ24PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    68 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFZ24PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFZ24PBF is -55°C to 175°C.
  • To ensure proper cooling, ensure a good thermal interface between the device and the heat sink, and use a heat sink with a thermal resistance of 1°C/W or less.
  • The recommended gate drive voltage for the IRFZ24PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFZ24PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and EMI.
  • Use a voltage clamp or a zener diode to protect against overvoltage, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IRFZ24PBF Overview

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Part Image IRFZ24FPBF International Rectifier

Power Field-Effect Transistor, 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFZ24F International Rectifier

Power Field-Effect Transistor, 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFZ24 Vishay Intertechnologies

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Part Image IRFZ24FXPBF Infineon Technologies AG

60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Image IRFZ24FPBF Infineon Technologies AG

60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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