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IRFZ44RPBF - Vishay

Description: N-Channel 60 V 50A (Tc) 150W (Tc) Through Hole TO-220AB

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IRFZ44RPBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB (High Voltage)
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IRFZ44RPBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220AB (High Voltage)
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IRFZ44RPBF Details

  • Manufacturer Part Number:

    IRFZ44RPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    60 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFZ44RPBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFZ44RPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. For the IRFZ44RPBF, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id). The SOA curve can be found in the datasheet or application notes.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal paste or thermal tape, and ensuring good contact between the device and the heat sink. Additionally, the PCB design should allow for good airflow and heat dissipation.
  • The recommended gate drive voltage for the IRFZ44RPBF is typically between 10V to 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
  • Yes, the IRFZ44RPBF can be used in high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is capable of providing a fast and clean switching signal. Additionally, the PCB design should be optimized for high-frequency operation, with attention to layout, decoupling, and parasitic inductance.
  • To protect the IRFZ44RPBF from overvoltage and overcurrent, it's essential to implement proper protection circuits, such as overvoltage protection (OVP) and overcurrent protection (OCP) circuits. These circuits can be implemented using external components, such as zener diodes, resistors, and fuses, or using dedicated protection ICs.

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IRFZ44RPBF Overview

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