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IRHF7130 - Infineon

Description: 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package

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IRHF7130 - Infineon PCB footprint - Other - Other - TO-39
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IRHF7130 - Infineon  - 3D model - Other - TO-39
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IRHF7130 Details

  • Manufacturer Part Number:

    IRHF7130

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-39, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    130 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.185 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-205AF

  • JESD-30 Code:

    O-MBCY-W3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IRHF7130 Overview

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IRHF7130 Alternates

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Image Part Number Model
Part Image JANSR2N7261 Infineon Technologies AG

Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Image IRHF8130 Infineon Technologies AG

Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Image JANSR2N7261 Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Image IRHF8130PBF Infineon Technologies AG

Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Image JANSH2N7261 Infineon Technologies AG

Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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