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IRHMS9A97260 - Infineon

Description: PD-97991 Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -200V, -45A, P-channel, R9 Superjunction Techno

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PCB Footprints
IRHMS9A97260 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-254AA
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3D Models
IRHMS9A97260 - Infineon  - 3D model - Transistor Outline, Vertical - TO-254AA
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IRHMS9A97260 Details

  • Manufacturer Part Number:

    IRHMS9A97260

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    3920 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JEDEC-95 Code:

    TO-254AA

  • JESD-30 Code:

    S-XSFM-P3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Reference Standard:

    MIL-STD-750; RH - 100K Rad(Si)

  • Surface Mount:

    NO

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    337 ns

  • Turn-on Time-Max (ton):

    97 ns

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IRHMS9A97260 Overview

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