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IRL100HS121 - Infineon

Description: INFINEON - IRL100HS121 - MOSFET, N-CH, 100V, 11A, 11.5W, PQFN

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PCB Footprints
IRL100HS121 - Infineon PCB footprint - Other - Other - PQFN 2 mm x 2 mm
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IRL100HS121 - Infineon  - 3D model - Other - PQFN 2 mm x 2 mm
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IRL100HS121 Details

  • Manufacturer Part Number:

    IRL100HS121

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    13 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    10.2 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6.3 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2.5 W

  • Power Dissipation-Max (Abs):

    11.5 W

  • Pulsed Drain Current-Max (IDM):

    41 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL100HS121 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRL100HS121 is -55°C to 175°C.
  • To ensure proper cooling, it is recommended to attach a heat sink to the device and ensure good thermal contact. The heat sink should be designed to dissipate the maximum power dissipation of the device.
  • The recommended gate drive voltage for the IRL100HS121 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRL100HS121 from overvoltage and overcurrent, it is recommended to use a voltage regulator and a current limiter in the circuit design. Additionally, a fuse or a circuit breaker can be used to protect against overcurrent.
  • The maximum allowable power dissipation for the IRL100HS121 is 150W, but this value can be derated based on the operating temperature and other factors.

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