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IRLB8748PBF - Infineon

Description: INFINEON - IRLB8748PBF - MOSFET Transistor, N Channel, 40 A, 30 V, 0.0038 ohm, 10 V, 1.8 V

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Symbol
IRLB8748PBF - Infineon - PCB symbol
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PCB Footprints
IRLB8748PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB
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3D Models
IRLB8748PBF - Infineon - 3D model - Transistor Outline, Vertical - TO-220AB
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IRLB8748PBF Details

  • Manufacturer Part Number:

    IRLB8748PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    114 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    78 A

  • Drain-source On Resistance-Max:

    0.0048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    370 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLB8748PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLB8748PBF is -40°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended operating conditions.
  • The recommended gate drive voltage for the IRLB8748PBF is between 10V and 15V, with a maximum voltage of 20V.
  • Yes, the IRLB8748PBF can be used in a parallel configuration to increase current handling, but ensure proper thermal management and synchronization of the gate signals.
  • Use a suitable overvoltage protection circuit and a current sense resistor to monitor and limit the current, and consider using a protection IC or a fuse to prevent damage from overcurrent conditions.

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IRLB8748PBF Overview

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Power Field-Effect Transistor, 78A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB