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IRLS3034TRL7PP - Infineon

Description: Infineon IRLS3034TRL7PP N-channel MOSFET, 380 A, 40 V HEXFET, 7+Tab-Pin D2PAK

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IRLS3034TRL7PP Details

  • Manufacturer Part Number:

    IRLS3034TRL7PP

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.0014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    1540 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLS3034TRL7PP Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLS3034TRL7PP is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking and minimizing thermal resistance. Additionally, consider using a thermal interface material to improve heat transfer.
  • The recommended gate drive voltage for the IRLS3034TRL7PP is between 10V and 15V, with a maximum voltage of 20V.
  • To protect the IRLS3034TRL7PP, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor, in conjunction with a voltage regulator.
  • For optimal performance and thermal management, follow a multi-layer PCB design with a solid ground plane, and ensure a low-thermal-resistance path from the device to the heat sink. Consult the Infineon application note AN2013-01 for more information.

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IRLS3034TRL7PP Overview

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Part Image IRLS3034-7PPBF Infineon Technologies AG

Power Field-Effect Transistor, 240A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET