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IRLZ24LPBF - Vishay

Description: MOSFET N-Chan 60V 17 Amp

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Symbol
IRLZ24LPBF - Vishay - PCB symbol
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PCB Footprints
IRLZ24LPBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I2PAK (TO-262)
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3D Models
IRLZ24LPBF - Vishay - 3D model - Transistor Outline, Vertical - I2PAK (TO-262)
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IRLZ24LPBF Details

  • Manufacturer Part Number:

    IRLZ24LPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    68 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLZ24LPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLZ24LPBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
  • To ensure proper soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a soldering flux to the pins. Avoid applying excessive force or heat, which can damage the device.
  • For optimal performance, it's recommended to use a PCB layout with a solid ground plane, and to keep the traces as short and wide as possible. Avoid routing high-frequency signals near the device, and use a decoupling capacitor (e.g., 100nF) close to the device.
  • Yes, the IRLZ24LPBF is suitable for high-reliability applications, such as automotive, industrial, and aerospace. However, it's essential to follow proper design, manufacturing, and testing procedures to ensure the device meets the required reliability standards.
  • To prevent electrostatic discharge (ESD) damage, handle the device with an ESD wrist strap or mat, and ensure that the PCB has proper ESD protection, such as TVS diodes or ESD protection circuits.

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IRLZ24LPBF Overview

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IRLZ24LPBF Alternates

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Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA