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IRS2108STRPBF - Infineon

Description: Driver 600V 0.6A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SOIC N T/R

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IRS2108STRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 8 Lead SOIC_a
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IRS2108STRPBF - Infineon  - 3D model - Small Outline Packages - 8 Lead SOIC_a
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IRS2108STRPBF Details

  • Manufacturer Part Number:

    IRS2108STRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Interface IC Type:

    HALF BRIDGE BASED IGBT/MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.9 mm

  • Moisture Sensitivity Level:

    2

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Peak Current Limit-Nom:

    0.6 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.75 mm

  • Supply Voltage-Max:

    20 V

  • Supply Voltage-Min:

    10 V

  • Supply Voltage-Nom:

    15 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    0.28 µs

  • Turn-on Time:

    0.3 µs

  • Width:

    3.9 mm

IRS2108STRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRS2108STRPBF is -40°C to 150°C.
  • The bootstrap capacitor should be sized based on the maximum voltage and current requirements of the high-side driver. A general rule of thumb is to use a capacitor with a value of at least 10nF to 22nF, and a voltage rating of at least 25V.
  • To minimize EMI and noise, it is recommended to place the IRS2108STRPBF close to the power MOSFET, and to use a symmetrical layout with the high-side and low-side drivers. Additionally, use a solid ground plane and keep the high-frequency signals away from the low-frequency signals.
  • The IRS2108STRPBF has built-in overvoltage and undervoltage protection, but it is still recommended to use external protection devices such as TVS diodes or zener diodes to protect against voltage transients and spikes.
  • The recommended deadtime setting for the IRS2108STRPBF depends on the specific application and the characteristics of the power MOSFETs. A general rule of thumb is to set the deadtime to at least 100ns to 200ns to prevent shoot-through current.

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