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IRS2111SPBF - Infineon

Description: Driver 600V 0.6A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC N Tube

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IRS2111SPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 8 Lead SOIC HEIGHT 1.75
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IRS2111SPBF - Infineon  - 3D model - Small Outline Packages - 8 Lead SOIC HEIGHT 1.75
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IRS2111SPBF Details

  • Manufacturer Part Number:

    IRS2111SPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Interface IC Type:

    HALF BRIDGE BASED IGBT/MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.9 mm

  • Moisture Sensitivity Level:

    2

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Peak Current Limit-Nom:

    0.6 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.75 mm

  • Supply Voltage-Max:

    20 V

  • Supply Voltage-Min:

    10 V

  • Supply Voltage-Nom:

    15 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Turn-off Time:

    0.18 µs

  • Turn-on Time:

    0.95 µs

  • Width:

    3.9 mm

IRS2111SPBF Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the IRS2111SPBF is 500 kHz, but it can be extended up to 1 MHz with proper PCB design and layout.
  • Proper thermal management can be achieved by providing a heat sink, using a thermal interface material, and ensuring good airflow around the device. The thermal pad of the device should be connected to a copper plane on the PCB to dissipate heat efficiently.
  • The recommended dead time for the IRS2111SPBF is typically between 100 ns to 500 ns, depending on the application and the switching frequency. A longer dead time can help reduce shoot-through currents, but may also increase switching losses.
  • Yes, the IRS2111SPBF can be used for both high-side and low-side gate drive applications. The device has separate output pins for the high-side and low-side gate drives, allowing it to drive both N-channel and P-channel power MOSFETs.
  • The IRS2111SPBF has built-in protection against voltage spikes and transients, including under-voltage lockout (UVLO) and over-voltage protection (OVP). Additionally, external protection devices such as TVS diodes and resistors can be used to further protect the device from voltage transients.

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IRS2111SPBF Overview

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