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IRS2302SPBF - Infineon

Description: Gate Drivers HALF BRDG DRVR 600V 5 to 20V 540ns

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IRS2302SPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8N-ren1
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IRS2302SPBF Details

  • Manufacturer Part Number:

    IRS2302SPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, MS-012AA, PLASTIC, SOIC-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Built-in Protections:

    TRANSIENT; OVER CURRENT; UNDER VOLTAGE

  • Interface IC Type:

    HALF BRIDGE BASED PERIPHERAL DRIVER

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.9 mm

  • Moisture Sensitivity Level:

    2

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current Flow Direction:

    SOURCE AND SINK

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.75 mm

  • Supply Voltage-Max:

    20 V

  • Supply Voltage-Min:

    5 V

  • Supply Voltage-Nom:

    15 V

  • Surface Mount:

    YES

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    2.54 mm

  • Terminal Position:

    DUAL

  • Turn-off Time:

    0.28 µs

  • Turn-on Time:

    0.95 µs

  • Width:

    3.9 mm

IRS2302SPBF Frequently Asked Questions (FAQs)

  • The IRS2302SPBF can operate up to 500 kHz, but the recommended operating frequency is up to 200 kHz for optimal performance.
  • Proper thermal management can be achieved by providing a heat sink or a thermal pad on the exposed pad of the device, and ensuring good airflow around the device.
  • A good layout and routing practice is to keep the high-frequency switching nodes (e.g. drain and source) as close as possible to the device, and to use a solid ground plane to reduce EMI.
  • Overvoltage protection can be achieved using a TVS diode or a zener diode, while overcurrent protection can be achieved using a fuse or a current-sensing resistor.
  • The recommended gate drive voltage is between 10V to 15V, but it can be adjusted based on the specific application requirements.

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IRS2302SPBF Overview

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