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ISC060N10NM6ATMA1 - Infineon

Description: N-Channel MOSFET VDS= 100V, RDS(on),max= 6mΩ, ID= 97A, Qoss=48nC, PG-TDSON-8 FL

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ISC060N10NM6ATMA1 Details

  • Manufacturer Part Number:

    ISC060N10NM6ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    291 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    97 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    388 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ISC060N10NM6ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for ISC060N10NM6ATMA1 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -20°C to 125°C for optimal performance and reliability.
  • Proper thermal management is crucial for ISC060N10NM6ATMA1. Ensure good thermal contact between the module and the heat sink, use a suitable thermal interface material, and maintain a low thermal resistance between the module and the heat sink. Also, consider forced air cooling or liquid cooling for high-power applications.
  • The recommended gate resistance for ISC060N10NM6ATMA1 is between 10 ohms and 100 ohms. A lower gate resistance can lead to faster switching times, but may also increase the risk of oscillations and electromagnetic interference (EMI). A higher gate resistance can reduce EMI, but may slow down the switching times.
  • Yes, ISC060N10NM6ATMA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive circuits are designed to handle the increased current. Also, consider the thermal management and electrical isolation between the modules.
  • The maximum allowable voltage transient for ISC060N10NM6ATMA1 is specified in the datasheet as 1200 V. However, it's recommended to limit the voltage transient to 1000 V or less to ensure reliable operation and prevent damage to the module.

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