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IXFB40N110Q3 - LITTELFUSE

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IXFB40N110Q3 Details

  • Manufacturer Part Number:

    IXFB40N110Q3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    4000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1100 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.26 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1560 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IXFB40N110Q3 Overview

Use the download button to access the IXFB40N110Q3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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IXFB40N110Q3 Alternates

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Image Part Number Model
Part Image IXFB40N110P Littelfuse Inc

Power Field-Effect Transistor, 40A I(D), 1100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IXFB40N110P IXYS Corporation

Power Field-Effect Transistor, 40A I(D), 1100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IXFB40N110Q3 IXYS Corporation

Power Field-Effect Transistor

Part Image IXFB38N100Q2 Littelfuse Inc

Power Field-Effect Transistor, 38A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IXFB38N100Q IXYS Corporation

Power Field-Effect Transistor, 38A I(D), 1000V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for IXFB40N110Q3, check out Findchips.com