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IXFH16N80P - LITTELFUSE

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IXFH16N80P - LITTELFUSE  - 3D model
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IXFH16N80P Details

  • Manufacturer Part Number:

    IXFH16N80P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    23 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    460 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

IXFH16N80P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFH16N80P is a 5x6mm pad with a 1.5mm thermal pad in the center. The datasheet provides a recommended land pattern, but it's essential to follow the manufacturer's guidelines for optimal thermal performance.
  • While IXFH16N80P is a high-speed IGBT, it's not optimized for high-frequency switching applications above 100 kHz. The device's internal construction and packaging may introduce parasitic inductances and resistances that can affect performance. It's recommended to consult with the manufacturer or use a more suitable device for high-frequency applications.
  • To ensure reliable operation of IXFH16N80P in high-temperature environments, it's essential to follow the recommended operating conditions and derating guidelines. Ensure proper heat sinking, and consider using a thermal interface material to improve heat transfer. Additionally, monitor the device's junction temperature and adjust the operating conditions accordingly.
  • The recommended gate drive voltage for IXFH16N80P is between 10V and 15V. However, it's essential to ensure that the gate drive voltage with the specific application requirements and the IGBT's internal threshold voltage.
  • Yes, IXFH16N80P can be used in a parallel configuration to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential device damage.

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IXFH16N80P Overview

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