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IXFH20N100P - LITTELFUSE

Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3

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Symbol
IXFH20N100P - LITTELFUSE - PCB symbol
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PCB Footprints
IXFH20N100P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247
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3D Models
IXFH20N100P - LITTELFUSE - 3D model - Transistor Outline, Vertical - TO-247
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IXFH20N100P Details

  • Manufacturer Part Number:

    IXFH20N100P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Philippines, South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    800 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.57 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    660 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH20N100P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH20N100P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXFH20N100P is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and PCB layout to ensure reliable operation.
  • To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of ≤ 1°C/W, and apply a thermal interface material (TIM) with a thermal conductivity of ≥ 1 W/m-K between the device and heat sink.
  • The maximum allowed case temperature for the IXFH20N100P is 150°C, but it's recommended to operate the device at a case temperature of ≤ 125°C to ensure reliable operation and long-term reliability.
  • Yes, you can parallel multiple IXFH20N100P devices to increase current handling, but it's essential to ensure that each device has an identical thermal environment and that the current sharing is balanced to prevent overheating and uneven wear.

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IXFH20N100P Overview

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