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IXFH220N20X3 - LITTELFUSE

Description: MOSFET DISCMSFT NCHULTRJNCTN X3CLASS

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IXFH220N20X3 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247  height 5.21
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IXFH220N20X3 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247  height 5.21
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IXFH220N20X3 Details

  • Manufacturer Part Number:

    IXFH220N20X3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    220 A

  • Drain-source On Resistance-Max:

    0.0062 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    890 W

  • Pulsed Drain Current-Max (IDM):

    500 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH220N20X3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH220N20X3 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's recommended to follow the PCB layout guidelines provided in the datasheet or application notes to ensure proper thermal performance and reliability.
  • The IXFH220N20X3 is rated for operation up to 150°C, but it's recommended to derate the device's current and voltage ratings at higher temperatures to ensure reliability and prevent thermal runaway. Consult the datasheet and application notes for specific derating guidelines.
  • Proper cooling of the IXFH220N20X3 is crucial to ensure reliable operation. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of ≤ 1°C/W. Also, consider using a thermal interface material (TIM) to fill any gaps between the device and heat sink. Consult the datasheet and application notes for specific thermal design guidelines.
  • The recommended gate drive voltage for the IXFH220N20X3 is 10-15V, with a maximum gate-source voltage of ±20V. Ensure the gate drive voltage is within the recommended range to prevent damage to the device and ensure proper switching performance.
  • Yes, the IXFH220N20X3 can be used in a parallel configuration to increase the overall current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing and potential damage to the devices. Consult the datasheet and application notes for specific guidelines on parallel operation.

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IXFH220N20X3 Overview

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