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IXFH26N60P - LITTELFUSE

Description: Trans MOSFET N-CH 600V 26A 3-Pin(3+Tab) TO-247AD

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Symbol
IXFH26N60P - LITTELFUSE - PCB symbol
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PCB Footprints
IXFH26N60P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXFH40N50Q
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3D Models
IXFH26N60P - LITTELFUSE - 3D model - Transistor Outline, Vertical - IXFH40N50Q
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IXFH26N60P Details

  • Manufacturer Part Number:

    IXFH26N60P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    27 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    460 W

  • Pulsed Drain Current-Max (IDM):

    65 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

IXFH26N60P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFH26N60P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXFH26N60P is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast switching times. However, it's essential to consider the device's thermal performance and ensure proper cooling.
  • To ensure the reliability of IXFH26N60P in a high-temperature environment, it's crucial to follow the recommended operating temperature range (-40°C to 150°C) and ensure proper cooling. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • The maximum allowed voltage transient for IXFH26N60P is 600V, which is the device's maximum repetitive peak voltage rating. It's essential to ensure that the device is not exposed to voltage transients exceeding this rating to prevent damage or failure.
  • Yes, IXFH26N60P can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched and that the current sharing is balanced to prevent uneven stress and potential failure.

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IXFH26N60P Overview

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